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SIHB22N60AE-GE3

Part No SIHB22N60AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A D2PAK  /  N-Channel 600 V 20A (Tc) 179W (Tc) Surface Mount TO-263 (D²Pak)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1451 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB22
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1157717-SIHB22N60AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB22N60AE-GE3 CAD Model

Description

The Vishay 1157717-SIHB22N60AE-GE3 is an N-Channel MOSFET that has a drain to source voltage (Vdss) of 600 V and a continuous drain current (Id) of 20A (Tc).

  • Channel Type: N-Channel
  • Vdss: 600 V
  • Id (Continuous Drain Current): 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Qg (Gate Charge) (Max) @ Vgs: 96 nC @ 10 V
  • Supply and Demand Status: Balanced
  • Standard Package: 1,000
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3108 $59.5944
43+ $2.7166 $116.8138
66+ $2.6317 $173.6922
91+ $2.5468 $231.7588
118+ $2.4619 $290.5042
157+ $2.2072 $346.5304
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,110 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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