The Vishay Siliconix SIHB24N65E-GE3 is a N-channel MOSFET transistor that is packaged in a tube and has a standard package of 1000.

• Mounting: SMD (SMT)
• Power Dissipation: 250W (Tc)
• Drain to Source Voltage (Vdss): 650V
• Current-Continuous Drain (Id): 24A (Tc)
• Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
• Temperature Range: -55°C to 150°C (TJ)
• Category: Discrete Semiconductor Products