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Same model may have multiple batches, images only for reference.
SIHD5N50D-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD5N50D-GE3

Part No SIHD5N50D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.3A TO252 DPK
Datasheet
SIHD5N50D-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 325pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1096414-SIHD5N50D-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIHD5N50D-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance N-channel power MOSFET that features a drain-source breakdown voltage of 500V and a continuous drain current of 5.3A at 25°C.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5.3A @ 25°C
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 104W
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge: 20nC @ 10V
  • Input Capacitance: 325pF @ 100V
  • Package: TO-252AA
  • Mounting Type: SMD (SMT)
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.4253 $68.5518
13+ $9.3740 $121.8620
20+ $9.0818 $181.6360
27+ $8.7884 $237.2868
34+ $8.4962 $288.8708
46+ $7.6172 $350.3912
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