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SIHF16N50C-E3 Real Image1 SIHF16N50C-E3 Real Image2
Same model may have multiple batches, images only for reference.
SIHF16N50C-E3 Real Image1 SIHF16N50C-E3 Real Image2
SIHF16N50C-E3 Real Image1 SIHF16N50C-E3 Real Image2
Same model may have multiple batches, images only for reference.

SIHF16N50C-E3

Part No SIHF16N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-220
Datasheet
SIHF16N50C-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096421-SIHF16N50C-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIHF16N50C-E3 CAD Model

Description

The Vishay SIHF16N50C-E3 is an N-Channel MOSFET designed for discrete semiconductor applications.

  • Maximum Power Dissipation: 38W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 16A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 25V
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 8A, 10V
  • Package: TO-220 Full Pack
  • Mounting: Through Hole
  • Popularity: Medium
  • Supply and Demand: Sufficient

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