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Same model may have multiple batches, images only for reference.
SIHF22N65E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF22N65E-GE3

Part No SIHF22N65E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22A TO-220FK
Datasheet
SIHF22N65E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2415pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 211704-SIHF22N65E-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHF22N65E-GE3 CAD Model

Description

The SIHF22N65E-GE3 is a MOSFET transistor manufactured by Vishay.

  • Popularity: high
  • Supply and Demand Status: limited
  • Packaging: TO-220 full pack
  • Maximum Power Dissipation (Tc): 35W

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