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SIHF23N60E-GE3

Part No SIHF23N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 23A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2418pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 158 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096424-SIHF23N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHF23N60E-GE3 CAD Model

Description

The SIHF23N60E-GE3 is a N-channel MOSFET transistor manufactured by Vishay.

  • Maximum Power Dissipation: 35W @ Tc
  • Continuous Drain Current @ 25°C: 23A
  • Drain-Source Breakdown Voltage: 600V
  • Package: TO-220 Full Pack
  • Mounting Type: through-hole technology
  • Market Status: currently active
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7957 $58.7097
51+ $2.2940 $116.9940
78+ $2.2222 $173.3316
108+ $2.1506 $232.2648
139+ $2.0789 $288.9671
186+ $1.8639 $346.6854
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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