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SIHF530STRL-GE3

Part No SIHF530STRL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 14A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF530
Standard Package 800 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 323464-SIHF530STRL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF530STRL-GE3 CAD Model

Description

The SIHF530STRL-GE3 is a N-Channel MOSFET (Metal Oxide) transistor in a TO-263-3, D²Pak package.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 14A @ 25°C
  • Maximum On-Resistance (Rds On): 160mOhm @ 8.4A, 10V
  • Gate Charge (Qg): 26nC @ 10V
  • Power Dissipation: 3.7W
  • Temperature Range: -55°C to 175°C
  • Package: tape & reel
  • Quantity per package: 800 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8234 $53.5210
150+ $0.6756 $101.3400
230+ $0.6545 $150.5350
320+ $0.6334 $202.6880
410+ $0.6123 $251.0430
550+ $0.5490 $301.9500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,700 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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