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IRFH5020TRPBF

Part No IRFH5020TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 5.1A 8-Pin PQFN EP T/R / MOSFET N-CH 200V 5.1A 8VQFN
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 150μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2290pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 8.3W (Tc)
Maximum Rds On at Id,Vgs 55 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 017595-IRFH5020TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFH5020
Introduction Date October 07, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFH5020TRPBF CAD Model

Description

The Infineon Technologies IRFH5020TRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 200V and a maximum continuous drain current of 5.1A @ 25°C.

  • Maximum Power Dissipation: 3.6W (Ta) and 8.3W (Tc)
  • Maximum Gate Charge: 54nC @ 10V
  • Mounting: surface mount
  • Package: 8-PQFN (5x6)
  • Ideal for: power supplies, motor control, and DC-DC converters
  • Low Rds On value: 55 mOhm @ 7.5A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3985 $55.9400
90+ $1.1475 $103.2750
135+ $1.1116 $150.0660
190+ $1.0758 $204.4020
245+ $1.0399 $254.7755
325+ $0.9323 $302.9975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,200 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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