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Same model may have multiple batches, images only for reference.
SIHF540S-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF540S-GE3

Part No SIHF540S-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHF540S-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 3.7W (Ta), 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF540
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277898-SIHF540S-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF540S-GE3 CAD Model

Description

The Vishay SIHF540S-GE3 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 28A (Tc).

  • Maximum Rds on: 77mOhm @ 17A, 10V
  • Gate Charge: 72nC @ 10V
  • Input Capacitance: 1700pF @ 25V
  • Maximum Vgs: ±20V
  • Suitable for: Use in a variety of applications, including power supplies, motor control, and lighting.

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