The SIHF840LCL-GE3 is a high voltage N-Channel MOSFET from Vishay utilizing a Super Junction technology. This MOSFET is designed for high efficiency and fast switching in various power electronics applications.

Applications

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• Lighting Ballasts
• DC-DC Converters
• Solar Inverters

Features

• Super Junction Technology
• Low On-Resistance (RDS(on))
• High Avalanche Ruggedness
• Fast Switching Speed
• Lead (Pb)-free and RoHS Compliant
• Halogen-free

Benefits

• Improved efficiency in power conversion applications
• Reduced power losses due to low on-resistance
• Enhanced reliability in high voltage applications
• Minimized switching losses
• Compliance with environmental regulations

Additional Details

The SIHF840LCL-GE3 is packaged in a TO-220 FullPAK. It features a drain-source voltage (VDS) rating of 800V and a continuous drain current (ID) rating that depends on the case temperature. Its low gate charge (Qg) contributes to fast switching performance. This MOSFET is suitable for applications requiring high efficiency and robustness. Refer to the datasheet for complete specifications including thermal resistance, gate charge characteristics, and safe operating area (SOA).