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Same model may have multiple batches, images only for reference.
SIHFU9220-GE3
Same model may have multiple batches, images only for reference.

SIHFU9220-GE3

Part No SIHFU9220-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHFU9220-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number SIHFU9220
Other Names 742-SIHFU9220-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277905-SIHFU9220-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFU9220-GE3 CAD Model

Description

The SIHFU9220-GE3 is a P-channel MOSFET transistor used in various electronic circuits.

  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 3.6A @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10V
  • Package Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Ideal for: Use in power supply circuits, DC-DC converters, and motor control circuits.

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