The Vishay SIHG11N80E-GE3 is an N-Channel MOSFET with a Drain to Source Voltage (Vdss) of 800V and Continuous Drain Current of 12A (Tc) at 25°C.

• Drain to Source Voltage (Vdss): 800V
• Continuous Drain Current: 12A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 179W (Tc)
• Mounting Technology: Through Hole
• Package/Case: TO-247-3
• Supplier Device Package: TO-247AC
• Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
• Maximum Gate-Source Voltage: ±30V
• Temperature Range - Operating: -55°C to 150°C (TJ)