The SIHG180N60E-GE3 is an N-channel MOSFET transistor that is a part of the discrete semiconductor products category.

• Channel Type: N-channel
• Package: Tube
• Standard Package: 25
• Drain to Source Voltage: 600V
• Continuous Drain Current: 19A (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250μA
• Power Dissipation: 156W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
• Temperature Range: -55°C to 150°C (TJ)
• MSL: 1 (unlimited)
• HTSUS: 8541.29.0095
• Manufacturer: Vishay Siliconix