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Same model may have multiple batches, images only for reference.
SIHH11N60EF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHH11N60EF-T1-GE3

Part No SIHH11N60EF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A POWERPAK8X8
Datasheet
SIHH11N60EF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1078pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 114W (Tc)
Maximum Rds On at Id,Vgs 357 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 8 x 8
Dimension 8-PowerTDFN
Win Source Part Number 1001054-SIHH11N60EF-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHH11N60EF-T1-GE3 CAD Model

Description

The Vishay SIHH11N60EF-T1-GE3 is an N-channel MOSFET.

  • Power Dissipation: 114W (Tc)
  • Package: PowerPAK 8 x 8
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 62nC @ 10V
  • Maximum Input Capacitance: 1078pF @ 100V
  • Halogen-Free: Compliant
  • Market Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2831 $59.0958
43+ $2.6939 $115.8377
67+ $2.6098 $174.8566
92+ $2.5255 $232.3460
119+ $2.4414 $290.5266
159+ $2.1887 $348.0033
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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