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Same model may have multiple batches, images only for reference.
SIHP11N80AE-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP11N80AE-GE3

Part No SIHP11N80AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP11N80AE-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 804 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP11
Other Names ,742-SIHP11N80AE-GE3CT,742-SIHP11N80AE-GE3TR,742-SIHP11N80AE-GE3DKR,742-SIHP11N80AE-GE3TR,742-SIHP11N80AE-GE3CT,742-SIHP11N80AE-GE3DKR,742-SIHP11N80AE-GE3
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277724-SIHP11N80AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP11N80AE-GE3 CAD Model

Description

The SIHP11N80AE-GE3 MOSFET is an N-channel metal oxide semiconductor field-effect transistor.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250uA
  • Power Dissipation: 78W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
  • Temperature Range for Operating: -55C to 150C (TJ)

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