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SIHP12N50C-E3 Real Image1 SIHP12N50C-E3 Real Image2
Same model may have multiple batches, images only for reference.
SIHP12N50C-E3 Real Image1 SIHP12N50C-E3 Real Image2
SIHP12N50C-E3 Real Image1 SIHP12N50C-E3 Real Image2
Same model may have multiple batches, images only for reference.

SIHP12N50C-E3

Part No SIHP12N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220AB
Datasheet
SIHP12N50C-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1375pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 555 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-220-3
Win Source Part Number 1096436-SIHP12N50C-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHP12N50C-E3 CAD Model

Description

The SIHP12N50C-E3 by Vishay is an N-channel MOSFET electronic component with a maximum power dissipation of 208W (Tc).

  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 48nC @ 10V
  • Maximum Input Capacitance: 1375pF @ 25V
  • Dimension: TO-220-3 dimension

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8461 $50.7660
145+ $0.6942 $100.6590
225+ $0.6725 $151.3125
310+ $0.6508 $201.7480
400+ $0.6291 $251.6400
535+ $0.5641 $301.7935
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