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Same model may have multiple batches, images only for reference.
SIHP15N65E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP15N65E-GE3

Part No SIHP15N65E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220AB
Datasheet
SIHP15N65E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 1640pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1096438-SIHP15N65E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHP15N65E-GE3 CAD Model

Description

The Vishay 1096438-SIHP15N65E-GE3 is an N-channel MOSFET that comes in a tube/rail packaging and through-hole mounting.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 15A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 96nC @ 10V
  • Maximum Rds On: 280 mOhm @ 8A and 10V
  • Operating Temperature: -55°C to 150°C
  • Package: TO-220AB

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