The Vishay Siliconix 1277712-SIHP22N60EF-GE3 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 600 V and a continuous drain current (Id) of 19A (Tc) @ 25°C.

• Drain to Source Voltage (Vdss): 600 V
• Continuous Drain Current (Id): 19A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 179W (Tc)
• Package: Tube
• Standard Package: 1,000
• Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
• Vgs (Max): ±30V
• Temperature Range: -55°C to 150°C (TJ)
• Designed for: Various electronic devices