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Same model may have multiple batches, images only for reference.
SIHU6N80AE-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHU6N80AE-GE3

Part No SIHU6N80AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHU6N80AE-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 100 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number SIHU6
Other Names 742-SIHU6N80AE-GE3DKR,742-SIHU6N80AE-GE3CT,742-SIHU6N80AE-GE3,742-SIHU6N80AE-GE3TR,742-SIHU6N80AE-GE3DKRINACTIVE,742-SIHU6N80AE-GE3DKR,742-SIHU6N80AE-GE3TR,742-SIHU6N80AE-GE3CT,742-SIHU6N80AE-GE3CTINACTIVE
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277729-SIHU6N80AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHU6N80AE-GE3 CAD Model

Description

The 1277729-SIHU6N80AE-GE3 is an N-channel MOSFET transistor in the E series manufactured by Vishay Siliconix.

  • Drain to Source Voltage: 800 V
  • Continuous Drain Current: 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
  • Maximum Gate Charge (Qg) @ Vgs: 22.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Maximum Power Dissipation: 62.5W (Tc)

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