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Same model may have multiple batches, images only for reference.
IRF6610TR1 Real Image
Same model may have multiple batches, images only for reference.

IRF6610TR1

Part No IRF6610TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 15A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1520pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 1046549-IRF6610TR1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6610TR1 CAD Model

Description

The Infineon Technologies IRF6610TR1 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Channel Type: N-channel
  • Power Dissipation: 2.2W (Ta) or 42W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 15A (Ta) or 66A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Maximum Input Capacitance: 1520pF @ 10V
  • Maximum Rds On: 6.8 mOhm @ 15A, 10V
  • Package: DirectFET Isometric SQ
  • Operating Temperature: -40°C to 150°C (TJ)
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
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60+ $1.9289 $115.7340
93+ $1.8688 $173.7984
128+ $1.8087 $231.5136
166+ $1.7475 $290.0850
222+ $1.5673 $347.9406
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