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Same model may have multiple batches, images only for reference.
SIHW30N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHW30N60E-GE3

Part No SIHW30N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 29A TO-247AD
Datasheet
SIHW30N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2600pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Dimension TO-3P-3 Full Pack
Win Source Part Number 1096445-SIHW30N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHW30N60E-GE3 CAD Model

Description

The Vishay SIHW30N60E-GE3 is an N-channel MOSFET with a TO-247AD package.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 29A @ 25 degrees Celsius
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 125 mOhm @ 15A, 10V
  • Power Dissipation: 250W (Tc)
  • Use: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4066 $59.4726
27+ $4.4361 $119.7747
41+ $4.2975 $176.1975
56+ $4.1588 $232.8928
72+ $4.0202 $289.4544
97+ $3.6043 $349.6171
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Availability: 2,700 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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