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Same model may have multiple batches, images only for reference.
SIR164DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR164DP-T1-GE3

Part No SIR164DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A PPAK SO-8
Datasheet
SIR164DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 123nC @ 10V
Max Input Capacitance 3950pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028751-SIR164DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR164DP-T1-GE3 CAD Model

Description

The Vishay SIR164DP-T1-GE3 is a high-performance MOSFET transistor designed for use in power management and battery protection circuits.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 5.2W
  • Case: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Maximum Rds on @ Id,Vgs: 2.5 mOhm @ 15A, 10V
  • Compliance: Halogen-free and RoHS
  • Supply and Demand Status: Sufficient

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55+ $0.9713 $53.4215
110+ $0.9098 $100.0780
175+ $0.8791 $153.8425
245+ $0.8176 $200.3120
320+ $0.7869 $251.8080
400+ $0.7561 $302.4400
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