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SI9424BDY-T1-GE3

Part No SI9424BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 40nC @ 4.5V
Maximum Gate-Source Voltage ±9V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096348-SI9424BDY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian SI9424BDY-T1-GE3 CAD Model

Description

The Vishay SI9424BDY-T1-GE3 is a P-channel MOSFET that is designed for use in discrete semiconductor products.

  • Package: 8-SO
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 5.6A
  • Gate-Source Threshold Voltage: 850mV @ 250μA
  • Maximum Gate Charge: 40nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 7.1A, 4.5V
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Maximum Gate-Source Voltage: ±9V
  • Supply and demand status: balance
  • Package Quantity: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1036 $60.6980
130+ $0.9055 $117.7150
200+ $0.8773 $175.4600
275+ $0.8489 $233.4475
355+ $0.8207 $291.3485
475+ $0.7357 $349.4575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,050 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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