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Same model may have multiple batches, images only for reference.
SIR166DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR166DP-T1-GE3

Part No SIR166DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SIR166DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 3340pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 102006-SIR166DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR166DP-T1-GE3 CAD Model

Description

The Vishay SIR166DP-T1-GE3 is a N-channel MOSFET transistor that is designed to operate with a drive voltage of up to 4.5V and a minimum Rds On of 10V.

  • Polarity: N-channel
  • Drive Voltage: Up to 4.5V, Minimum Rds On of 10V
  • Power Dissipation: 5W (Ta) and 48W (Tc)
  • Continuous Drain Current @ 25°C: 40A (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 77nC @ 10V
  • Package: PowerPAK SO-8
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3443 $51.6450
355+ $0.2826 $100.3230
550+ $0.2737 $150.5350
760+ $0.2649 $201.3240
980+ $0.2561 $250.9780
1,310+ $0.2296 $300.7760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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