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Same model may have multiple batches, images only for reference.
SIR408DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR408DP-T1-GE3

Part No SIR408DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A PPAK SO-8
Datasheet
SIR408DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1230pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 44.6W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 134719-SIR408DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR408DP-T1-GE3 CAD Model

Description

The Vishay SIR408DP-T1-GE3 is a power MOSFET component that is designed with N-channel polarity.

  • Polarity: N-channel
  • Win Source Part Number: 134719-SIR408DP-T1-GE3
  • Mounting: Reel
  • Power Dissipation: 4.8W (Ta), 44.6W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds on @ Id,Vgs: 6.3 mOhm @ 20A, 10V
  • Popularity: Medium
  • Supply: Limited
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3423 $60.4035
105+ $1.1014 $115.6470
165+ $1.0670 $176.0550
225+ $1.0326 $232.3350
290+ $0.9982 $289.4780
390+ $0.8949 $349.0110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 45 pcs
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