The Vishay 028759-SIR464DP-T1-GE3 is an N-channel MOSFET designed for discrete semiconductor products.

• Mounting Type: Surface Mount (SMT)
• Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current @ 25°C: 50A (Tc)
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Maximum Gate Charge: 95nC @ 10V
• Maximum Input Capacitance: 3545pF @ 15V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On at Id,Vgs: 3.1 mOhm @ 15A, 10V
• Introduction Date: September 03, 2008
• ECCN: EAR99
• Country of Origin: China
• Estimated EOL Date: 2022