The Vishay 028761-SIR468DP-T1-GE3 MOSFET is a high-performance N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current at 25°C of 40A (Tc).

• Maximum Rds On at Id, Vgs: 5.7 mOhm @ 20A, 10V
• Max Gate Charge: 44nC @ 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Input Capacitance: 1720pF @ 15V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Power Dissipation (Max): 5W (Ta), 50W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)