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SIR474DP-T1-GE3

Part No SIR474DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 985pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.9W (Ta), 29.8W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064662-SIR474DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR474DP-T1-GE3 CAD Model

Description

The Vishay SIR474DP-T1-GE3 is a MOSFET N-channel transistor with a power dissipation of 3.9W (Ta) and 29.8W (Tc).

  • Maximum Rds On: 9.5 mOhm @ 10A, 10V
  • Continuous Drain Current @ 25°C: 20A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250µA
  • Max Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 985pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Drain-Source Breakdown Voltage: 30V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,125+ $0.0185 $57.8125
7,695+ $0.0150 $115.4250
11,540+ $0.0150 $173.1000
15,385+ $0.0150 $230.7750
20,835+ $0.0139 $289.6065
27,275+ $0.0127 $346.3925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,200 pieces
MOQ: 3125 pcs
Order Increment : 1 pcs
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