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Same model may have multiple batches, images only for reference.
SIR476DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR476DP-T1-GE3

Part No SIR476DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 60A PPAK SO-8
Datasheet
SIR476DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 6150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096473-SIR476DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR476DP-T1-GE3 CAD Model

Description

The Vishay SIR476DP-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 25V.

  • Continuous Drain Current @ 25°C: 60A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 1.7 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 135nC @ 10V
  • Input Capacitance: 6150pF @ 10V
  • Mounting Type: SMD technology
  • Package: PowerPAK SO-8
  • Supply and Demand Status: balanced
  • Operating Temperature: -55°C to 150°C
  • Maximum Power Dissipation: 6.25W (Ta), 104W (Tc)

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