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Same model may have multiple batches, images only for reference.
SIR492DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR492DP-T1-GE3

Part No SIR492DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 40A PPAK SO-8
Datasheet
SIR492DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 110nC @ 8V
Max Input Capacitance 3720pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 4.2W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 15A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 042635-SIR492DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR492DP-T1-GE3 CAD Model

Description

Vishay's electronic component is a powerful tool designed for various applications.

  • Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4412 $59.5620
320+ $0.3615 $115.6800
495+ $0.3511 $173.7945
685+ $0.3396 $232.6260
885+ $0.3280 $290.2800
1,180+ $0.2945 $347.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,300 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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