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Same model may have multiple batches, images only for reference.
SIR606BDP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR606BDP-T1-RE3

Part No SIR606BDP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIR606BDP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10.9A (Ta), 38.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 50 V
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR606
Other Names SIR606BDP-T1-RE3CT,SIR606BDP-T1-RE3TR,SIR606BDP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277645-SIR606BDP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR606BDP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIR606BDP-T1-RE3 is a N-channel MOSFET transistor that has a maximum drain to source voltage of 100V and a maximum continuous drain current of 10.9A.

  • Power Dissipation: 5W
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1792 $53.0640
95+ $1.1045 $104.9275
145+ $1.0672 $154.7440
205+ $0.9926 $203.4830
265+ $0.9553 $253.1545
330+ $0.9180 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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