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SIR626ADP-T1-RE3

Part No SIR626ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 40.4A (Ta), 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.75mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3770 pF @ 30 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR626
Other Names 742-SIR626ADP-T1-RE3CT,742-SIR626ADP-T1-RE3TR,742-SIR626ADP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277646-SIR626ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR626ADP-T1-RE3 CAD Model

Description

The SIR626ADP-T1-RE3 power MOSFET is a high-performance N-channel device that belongs to the TrenchFET Gen IV series from Vishay Siliconix.

  • Category: Discrete Semiconductor Products
  • Package: PowerPAK SO-8
  • Drain-Source Voltage: 60 V
  • Continuous Drain Current: 40.4 A @ 25°C
  • Maximum Rds On: 1.75mOhm @ 20A and 10V
  • Maximum Gate Charge: 83 nC @ 10V
  • Maximum Vgs(th): 3.5V @ 250μA
  • Power Dissipation: 6.25W (Ta) and 104W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9754 $53.6470
110+ $0.9137 $100.5070
170+ $0.8828 $150.0760
245+ $0.8211 $201.1695
320+ $0.7902 $252.8640
400+ $0.7594 $303.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,971 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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