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Same model may have multiple batches, images only for reference.
SIR638ADP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR638ADP-T1-RE3

Part No SIR638ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A PPAK SO-8  /  N-Channel 40 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIR638ADP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR638
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIR638ADP-T1-RE3TR,SIR638ADP-T1-RE3DKR,SIR638ADP-T1-RE3CT
Standard Package 3,000
Win Source Part Number 998972-SIR638ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR638ADP-T1-RE3 CAD Model

Description

The SIR638ADP-T1-RE3 is a MOSFET (Metal Oxide) transistor that is a part of the TrenchFET® Gen IV series.

  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 100 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0801 $54.0050
115+ $0.8862 $101.9130
175+ $0.8585 $150.2375
245+ $0.8308 $203.5460
315+ $0.8032 $253.0080
420+ $0.7201 $302.4420
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