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SIR640ADP-T1-GE3

Name: SIR640ADP-T1-GE3
Brand: Vishay
SKU: 324102
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIR640ADP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 40V 60A PPAK SO-8
Datasheet	SIR640ADP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	40V
Continuous Drain Current at 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	90nC @ 10V
Max Input Capacitance	4240pF @ 20V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs	2 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SO-8
Dimension	PowerPAK SO-8
Win Source Part Number	113737-SIR640ADP-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Balance
Family Name	SiR640ADP
Introduction Date	June 25, 2013
ECCN	EAR99
Country of Origin	China
Halogen Free	Compliant
Estimated EOL Date	2026
Ultra Librarian 3D Model	Ultra Librarian SIR640ADP-T1-GE3 CAD Model

Alternative Products

Description

The SiR640ADP-T1-GE3 from Vishay is an N-channel MOSFET designed for discrete semiconductor products.

Power Dissipation: 6.25W (Ta) and 104W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current @ 25°C: 60A (Tc)
Maximum Rds On at Id,Vgs: 2 mOhm @ 20A, 10V
Maximum Gate-Source Voltage: ±20V
ECCN: EAR99

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.4254	$64.1430
100+	$1.1696	$116.9600
155+	$1.1331	$175.6305
215+	$1.0966	$235.7690
275+	$1.0600	$291.5000
365+	$0.9503	$346.8595

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,070 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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