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Same model may have multiple batches, images only for reference.
SIR802DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR802DP-T1-GE3

Part No SIR802DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 20-V (D-S) MOSFET
Datasheet
SIR802DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Vgs(th) (Maximum) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1785pF @ 10V
Vgs (Maximum) ±12V
Power Dissipation (Maximum) 4.6W (Ta), 27.7W (Tc)
Rds On (Maximum) @ Id, Vgs 5 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 1250008-SIR802DP-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR802DP-T1-GE3 CAD Model

Description

The Vishay SIR802DP-T1-GE3 is a MOSFET electronic component that is categorized as a discrete semiconductor product.

  • Power Dissipation (Ta): 4.6W
  • Power Dissipation (Tc): 27.7W
  • Maximum Vgs: ±12V
  • Series: TrenchFET
  • Mounting Style: SMD
  • Package: PowerPAK SO-8
  • Drain-Source Voltage: 20V
  • Gate Charge: 32nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
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34+ $2.9551 $100.4734
53+ $2.8628 $151.7284
73+ $2.7704 $202.2392
94+ $2.6781 $251.7414
125+ $2.4010 $300.1250
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Availability: 2,933 pieces
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