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SIR846ADP-T1-GE3

Part No SIR846ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 2350pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 122876-SIR846ADP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR846ADP-T1-GE3 CAD Model

Description

The SIR846ADP-T1-GE3 is a Power MOSFET from Vishay Siliconix, specifically designed for efficient power switching. It is an N-channel device housed in a PowerPAK® SO-8 package. The component uses Vishay's advanced TrenchFET® technology. The 'GE3' suffix indicates that the product is halogen-free and RoHS compliant.

Applications:

  • Synchronous Rectification in DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Battery Powered Applications
  • Motor Control

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses, allowing for higher frequency operation.
  • Logic Level Gate Drive: Enables direct drive from microcontrollers and logic devices.
  • TrenchFET® Power MOSFET Technology: Provides high cell density for low on-resistance.
  • PowerPAK® SO-8 Package: Compact footprint with excellent thermal performance.
  • Halogen-Free and RoHS Compliant: Environmentally friendly.

Benefits:

  • Improved System Efficiency: Low on-resistance and fast switching contribute to reduced power losses.
  • Reduced Board Space: The small PowerPAK SO-8 package allows for high-density designs.
  • Simplified Gate Drive: Logic-level gate drive simplifies the design process.
  • Enhanced Thermal Performance: The PowerPAK SO-8 package facilitates efficient heat dissipation.
  • Environmentally Friendly: Halogen-free and RoHS compliant.

Additional Details:

The SIR846ADP-T1-GE3 features a drain-source voltage (VDS) of 30V. The continuous drain current (ID) is dependent on the specific operating conditions and PCB layout. However, it typically ranges between 10-15A. The on-resistance (RDS(on)) is exceptionally low, which minimizes power dissipation and improves energy efficiency. The gate threshold voltage (VGS(th)) is designed for logic-level compatibility, generally between 1V and 3V. The PowerPAK SO-8 package's thermal characteristics contribute to effective heat dissipation, thereby improving reliability. The device is surface mountable, which supports automated assembly. This MOSFET is well-suited for various applications requiring efficient and reliable power switching, and its halogen-free and RoHS compliance makes it ideal for eco-conscious designs. The operating temperature range is typically -55°C to +150°C.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6737 $58.5795
85+ $1.3734 $116.7390
135+ $1.3305 $179.6175
180+ $1.2875 $231.7500
235+ $1.2446 $292.4810
315+ $1.1159 $351.5085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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