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SIR846BDP-T1-RE3

Part No SIR846BDP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16.1A (Ta), 65.8 (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2440 pF @ 50 V
Power Dissipation (Max) 5W (Ta), 83.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR846
Other Names 742-SIR846BDP-T1-RE3TR,742-SIR846BDP-T1-RE3CT,742-SIR846BDP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277649-SIR846BDP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR846BDP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIR846BDP-T1-RE3 is a N-channel MOSFET transistor.

  • Series: TrenchFET Gen IV
  • Package: PowerPAK SO-8
  • Packaging: Tape and reel
  • Standard Package: 3,000
  • Maximum Drain to Source Voltage: 100 V
  • Continuous Drain Current: 16.1A (Ta), 65.8 (Tc)
  • Maximum Rds On: 8mOhm @ 15A, 10V
  • Maximum Vgs(th): 4V @ 250μA
  • Maximum Power Dissipation: 5W (Ta), 83.3W (Tc)
  • Gate Charge (Qg): 52 nC @ 10 V
  • Input Capacitance (Ciss): 2440 pF @ 50 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99 product

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4832 $51.9120
85+ $1.2170 $103.4450
130+ $1.1790 $153.2700
180+ $1.1409 $205.3620
230+ $1.1029 $253.6670
305+ $0.9888 $301.5840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,797 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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