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Same model may have multiple batches, images only for reference.
SIR882DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR882DP-T1-GE3

Part No SIR882DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 100 V (D-S) MOSFET
Datasheet
SIR882DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1930pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 5.4W (Ta), 83W (Tc)
Rds On (Maximum) @ Id, Vgs 8.7 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 1250019-SIR882DP-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Family Name SiR882DP
Introduction Date April 07, 2010
ECCN EAR99
Country of Origin China
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SIR882DP-T1-GE3 CAD Model

Description

The SIR882DP-T1-GE3 is a TrenchFET MOSFET manufactured by Vishay.

  • Popularity: medium
  • Category: discrete semiconductor products
  • Maximum Drain-Source Voltage: 100V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum Rds On: 8.7 mOhm @ 20A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8622 $65.1770
80+ $1.5281 $122.2480
120+ $1.4802 $177.6240
165+ $1.4326 $236.3790
210+ $1.3848 $290.8080
280+ $1.2415 $347.6200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,684 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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