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SIRA52DP-T1-GE3

Part No SIRA52DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 40 V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer Vishay
Series TrenchFET®
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package PowerPAK® SO-8
Case / Package PowerPAK® SO-8
Family Name SIRA52
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SIRA52DP-T1-GE3CT, SIRA52DP-T1-GE3TR, SIRA52DP-T1-GE3DKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 848717-SIRA52DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA52DP-T1-GE3 CAD Model

Description

The Vishay SIRA52DP-T1-GE3 is a N-Channel MOSFET from the TrenchFET series. SIRA52DP-T1-GE3 is manufactured by Vishay Siliconix.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Voltage - Max: 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Power Dissipation (Max): 48W (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK SO-8
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Series: TrenchFET®
  • Product Status: Active
  • Popularity: Medium
  • Supply & Demand: Limited
  • Quantity Per Package: 3000
  • Estimated Production Lead Time: 51 Weeks

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9196 $59.7740
155+ $0.7546 $116.9630
240+ $0.7310 $175.4400
330+ $0.7075 $233.4750
425+ $0.6839 $290.6575
570+ $0.6131 $349.4670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,950 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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