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SIRA84DP-T1-GE3

Part No SIRA84DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1535 pF @ 15 V
Power Dissipation (Max) 34.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA84
Other Names SIRA84DP-T1-GE3TR,SIRA84DP-T1-GE3CT,SIRA84DP-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277655-SIRA84DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA84DP-T1-GE3 CAD Model

Description

The Vishay SIRA84DP-T1-GE3 is an N-channel MOSFET that is perfect for a variety of applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 60A
  • Maximum On-Resistance: 4.6mΩ
  • Gate Charge: 38nC
  • Package: PowerPAK SO-8
  • Operating Temperature: -55°C to 150°C
  • Package Quantity: 3000 units
  • Popularity and Supply/Demand: limited
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,480 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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