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Same model may have multiple batches, images only for reference.
SIRC04DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIRC04DP-T1-GE3

Part No SIRC04DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIRC04DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRC04
Other Names SIRC04DP-T1-GE3DKR,SIRC04DP-T1-GE3CT,SIRC04DP-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277657-SIRC04DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRC04DP-T1-GE3 CAD Model

Description

The Vishay SIRC04DP-T1-GE3 is a N-channel MOSFET transistor that belongs to the TrenchFET Gen IV series.

  • Package: PowerPAK SO-8
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 50W (Tc)
  • Drain to Source Voltage (Vdss): 30V
  • Current-Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15V
  • Vgs (Max): +20V, -16V
  • Operating Temperature: -55°C ~ 150°C (TJ)

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