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SIS330

Part No SIS330
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 211731-SIS330
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIS330 CAD Model

Description

The Vishay 211731-SIS330 is a N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 35A (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A (Tc)
  • Maximum Rds On at Id, Vgs: 5.6 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 15V
  • Power Dissipation: 3.7W (Ta), 52W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.9979 $59.9790
24+ $4.9215 $118.1160
37+ $4.7678 $176.4086
51+ $4.6142 $235.3242
65+ $4.4606 $289.9390
87+ $3.9986 $347.8782
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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