The Vishay SIS410DN-T1-GE3 is an N-Channel MOSFET that has a maximum power dissipation of 3.8W (Ta) and 52W (Tc).

• Category: discrete semiconductor product
• Drive Voltage: 4.5V (max Rds on) and 10V (min Rds on)
• Operating Temperature: -55°C to 150°C (TJ)
• Package: PowerPAK 1212-8
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 35A (Tc)
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Maximum Gate Charge: 41nC @ 10V
• Maximum Input Capacitance: 1600pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds on @ Id, Vgs: 4.8 mOhm @ 20A, 10V
• Usage: commonly used