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Same model may have multiple batches, images only for reference.
SIS427EDN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS427EDN-T1-GE3

Part No SIS427EDN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A 1212-8
Datasheet
SIS427EDN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1930pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 10.6 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096497-SIS427EDN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIS427EDN-T1-GE3 CAD Model

Description

The SiS427EDN-T1-GE3 is a P-channel MOSFET that is designed for use in discrete semiconductor applications manufactured by Vishay.

  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On @ Id, Vgs: 10.6 mOhm @ 11A, 10V
  • Mounting: Through-Hole
  • Package: PowerPAK 1212-8
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6098 $51.8330
200+ $0.5004 $100.0800
310+ $0.4847 $150.2570
430+ $0.4691 $201.7130
555+ $0.4535 $251.6925
740+ $0.4066 $300.8840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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