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ZXMP3A16N8TA

Part No ZXMP3A16N8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5.6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 29.6nC @ 10V
Max Input Capacitance 1022pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 036992-ZXMP3A16N8TA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMP3A16N8TA CAD Model

Description

Product Overview: ZXMP3A16N8TA - P-Channel MOSFET

The ZXMP3A16N8TA is a high-performance P-Channel MOSFET from Diodes Incorporated, designed for power management applications. This MOSFET utilizes the latest advancements in semiconductor technology to offer superior switching performance and energy efficiency. The device is housed in a compact SOT-223 package, making it suitable for space-constrained applications.

Key Features

  • Low On-Resistance: The ZXMP3A16N8TA boasts a low on-resistance of typically 14 mΩ at Vgs = -10V, ensuring minimal power loss and heat generation during operation.
  • High Current Capability: With a continuous drain current of -12A, this MOSFET can handle high current loads, making it ideal for demanding applications.
  • High Power Dissipation: The device can dissipate up to 1.25W of power, which contributes to its robust performance in various circuits.
  • Gate-Source Voltage: It features a ±8V gate-source voltage, providing a wide range of control for the gate drive.
  • Advanced Technology: Manufactured with Diodes Incorporated's advanced trench technology, the ZXMP3A16N8TA offers reduced gate charge and lower capacitances, which improve overall efficiency.

Applications

The ZXMP3A16N8TA is versatile and can be used in a variety of applications, including:

  • Load switch circuits
  • Power management systems
  • Battery management
  • DC-DC converters
  • Motor control circuits

Reliability and Quality

Diodes Incorporated is known for its commitment to quality and reliability. The ZXMP3A16N8TA is produced under strict quality control standards, ensuring that each MOSFET meets the high expectations of customers. The device is RoHS compliant, reflecting the company's dedication to environmental responsibility.

Conclusion

In summary, the ZXMP3A16N8TA P-Channel MOSFET from Diodes Incorporated is a superior choice for designers looking for a reliable, efficient, and compact power management solution. Its low on-resistance, high current capability, and advanced technology make it a valuable component for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7817 $50.8105
160+ $0.6414 $102.6240
245+ $0.6213 $152.2185
335+ $0.6013 $201.4355
435+ $0.5812 $252.8220
580+ $0.5211 $302.2380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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