The Infineon Technologies IPT059N15N3ATMA1 is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 150V and a Continuous Drain Current of 155A @ 25°C.

• Drain-Source Breakdown Voltage: 150V
• Continuous Drain Current: 155A @ 25°C
• Rds On: 5.9 mOhm @ 150A, 10V
• Max Gate Charge: 92nC @ 10V
• Package: PG-HSOF-8-1
• Input Capacitance: 7200pF @ 75V
• Application: Discrete Semiconductor Products
• Power Dissipation: 375W (Tc)
• Drive Voltage: 8V, 10V
• Operating Temperature: -55°C to 175°C (TJ)
• Supply and Demand: Limited