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Same model may have multiple batches, images only for reference.
SIS430DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIS430DN-T1-GE3

Part No SIS430DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 35A PPAK 1212-8
Datasheet
SIS430DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1600pF @ 12.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028775-SIS430DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIS430DN-T1-GE3 CAD Model

Description

The Vishay electronic component is a MOSFET type with a polarity of N-Channel and a power dissipation (Max) of 3.8W (Ta), 52W (Tc).

  • Polarity: N-Channel
  • Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
  • Mounting Type: SMD (SMT)
  • Package Type: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current at 25°C: 35A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1587 $57.9350
125+ $0.9508 $118.8500
190+ $0.9212 $175.0280
260+ $0.8914 $231.7640
340+ $0.8616 $292.9440
450+ $0.7725 $347.6250
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Availability: 4,540 pieces
MOQ: 50 pcs
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