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SIS435DNT-T1-GE3

Part No SIS435DNT-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 20V 30A 1212-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 5.4mOhm at 13A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 8V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 5700pF at 10V
Power Dissipation (Maximum) 3.7W, 39W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK 1212-8
Manufacturer Package PowerPAK 1212-8
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 720374-SIS435DNT-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIS435DNT-T1-GE3 CAD Model

Description

The Vishay Siliconix presents the SIS435DNT-T1-GE3, a P-channel MOSFET that comes in a PowerPAK 1212-8 package.

  • Supply and Demand Status: limited
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 30A
  • Input Capacitance: 5700pF @ 10V
  • Gate-Source Voltage(th): 900mV @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0674 $53.3700
115+ $0.8758 $100.7170
180+ $0.8485 $152.7300
245+ $0.8211 $201.1695
315+ $0.7937 $250.0155
425+ $0.7116 $302.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,400 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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