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SIS443DN-T1-GE3

Part No SIS443DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 35A PPAK 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 4370pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 11.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096500-SIS443DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIS443DN-T1-GE3 CAD Model

Description

The SIS443DN-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. It's designed for load switching and power management applications, utilizing advanced trench technology to achieve low on-resistance and gate charge, resulting in efficient power handling. The device is housed in a PowerPAK® SO-8 single package for optimized thermal performance.

Applications

  • Load Switching
  • Power Management in Portable Devices
  • Battery Management Systems
  • High-Side Switching
  • DC-DC Converters

Features

  • Low On-Resistance (Rds(on)): Minimizes conduction losses.
  • Low Gate Charge (Qg): Reduces switching losses.
  • Trench MOSFET Technology: Provides high cell density for efficient performance.
  • PowerPAK® SO-8 Single Package: Compact surface-mount package for efficient thermal management.
  • -20V Vgs Rating: Provides good design margin.
  • RoHS Compliant: Compliant with environmental regulations.

Benefits

  • Increased Efficiency: Reduced power losses lead to higher efficiency in power management applications.
  • Improved Thermal Performance: The PowerPAK® SO-8 package facilitates efficient heat dissipation.
  • Reduced Component Count: Integrated design simplifies circuit layouts.
  • Enhanced System Reliability: Robust design ensures stable performance under various operating conditions.
  • Smaller Footprint: Compact package allows for higher power density in space-constrained applications.

Additional Details

The SIS443DN-T1-GE3 has a drain-source voltage (Vds) rating of -30V and can handle a continuous drain current (Id) of up to -7.8A (depending on thermal conditions). The low Rds(on) value ensures minimal voltage drop across the MOSFET when it is conducting. The logic-level gate drive requirements make it easily controllable by microcontrollers and other low-voltage control circuits. The PowerPAK® SO-8 package's exposed drain pad allows for efficient heat transfer, enabling the device to handle higher currents without exceeding its maximum operating temperature. This is particularly important in densely populated circuit boards where heat dissipation can be a challenge.

Vishay's SIS443DN-T1-GE3 is a versatile P-Channel MOSFET that provides efficient and reliable performance in a compact package, making it well-suited for a variety of power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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