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SI9933CDY-T1-GE3

Part No SI9933CDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R / MOSFET 2P-CH 20V 4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 58 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 665pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028716-SI9933CDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si9933CDY
Introduction Date August 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI9933CDY-T1-GE3 CAD Model

Description

The Vishay Si9933CDY FET is a dual P-channel logic level gate FET with a drain-source breakdown voltage of 20V and a continuous drain current of 4A at 25°C.

  • Maximum Rds On: 58 mOhm @ 4.8A, 4.5V
  • Gate-source threshold voltage: 1.4V @ 250µA
  • Maximum gate charge: 26nC @ 10V
  • Operating temperatures: -50°C to 150°C
  • Packaging: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2359 $50.7185
455+ $0.2209 $100.5095
705+ $0.2135 $150.5175
1,010+ $0.1986 $200.5860
1,310+ $0.1911 $250.3410
1,635+ $0.1836 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 330,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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